? 2001 ixys all rights reserved features ? international standard packages ? minibloc, with aluminium nitride isolation ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? easy to mount ? space savings ? high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gh(th) v ds = v gs , i d = 8 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 0.24 ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability36 a i dm t c = 25 c, pulse width limited by t jm 144 a i ar t c = 25 c36a e ar t c = 25 c64mj e as t c = 25 c4j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 30 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr 98520c (02/01) d s g s s g s d minibloc, sot-227 b (ixfn) e153432 g = gate d = drain s = source tab = drain either source terminal at minibloc can be used as main or kelvin source ixfn 36n100 v dss = 1000v i d25 = 36a r ds(on) = 0.24 ? ? ? ? ?
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 36n100 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 ? i d25 , pulse test 18 40 s c iss 9200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1200 pf c rss 300 pf t d(on) 41 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 55 ns t d(off) r g = 1 ? (external), 110 n s t f 30 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 185 nc r thjc 0.18 k/w r thck 0.05 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive; 144 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = i s , -di/dt = 100 a/ s, v r = 100 vt j =25 c 180 ns t j =125 c 330 ns q rm t j =25 c2 c i rm 8a minibloc, sot-227 b m4 screws (4x) supplied dim. millimeter inches min. max. min. max. a 31.50 31.88 1.240 1.255 b 7.80 8.20 0.307 0.323 c 4.09 4.29 0.161 0.169 d 4.09 4.29 0.161 0.169 e 4.09 4.29 0.161 0.169 f 14.91 15.11 0.587 0.595 g30.12 30.30 1.186 1.193 h 38.00 38.23 1.496 1.505 j 11.68 12.22 0.460 0.481 k 8.92 9.60 0.351 0.378 l 0.76 0.84 0.030 0.033 m 12.60 12.85 0.496 0.506 n 25.15 25.42 0.990 1.001 o 1.98 2.13 0.078 0.084 p 4.95 5.97 0.195 0.235 q 26.54 26.90 1.045 1.059 r 3.94 4.42 0.155 0.174 s 4.72 4.85 0.186 0.191 t 24.59 25.07 0.968 0.987 u -0.05 0.1 -0.002 0.004
? 2001 ixys all rights reserved ixfn 36n100 v gs - volts 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 i d - amperes 0 10 20 30 40 50 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 8 16 24 32 40 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 1.0 1.3 1.6 1.9 2.2 i d =18a i d - amperes 0 1020304050 r ds(on) - normalized 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ds - volts 0 5 10 15 20 25 i d - amperes 0 10 20 30 40 50 v ds - volts 0 4 8 121620 i d - amperes 0 20 40 60 80 v gs = 10v v gs =10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 5v 5v 6v t j = 25 o c i d = 36a t j = 25 o c t j = 125 o c v gs =10v 9v 8v 7v 6v t j = 125 o c 6v figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixfn 36n100 v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 20 40 60 80 100 gate charge - nc 0 100 200 300 400 500 600 v gs - volts 0 2 4 6 8 10 12 v ds = 500 v i d = 18 a i g = 10 ma t j = 125 o c t j = 25 o c figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.001 0.010 0.100 1.000 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 crss coss f = 100khz ciss 30000
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